Semiconductor device and magneto-resistive sensor integration

ABSTRACT

A magnetic-sensing apparatus and method of making and using thereof is disclosed. The sensing apparatus may be fabricated from semiconductor circuitry and a magneto-resistive sensor. A dielectric may be disposed between the semiconductor circuitry and the magneto-resistive sensor.  
     In one embodiment, the semiconductor circuitry and magneto-resistive sensor are formed into a single package or, alternatively, monolithically formed into a single chip. In another embodiment, some of the semiconductor circuitry may be monolithically formed on a first chip with the magneto-resistive sensor, while other portions of the semiconductor circuitry may be formed on a second chip. As such, the first and second chips may be placed in close proximity and electrically connected together or alternatively have no intentional electrical interaction.  
     Exemplary semiconductor devices that might be implemented include, without limitation, capacitors, inductors, operational amplifiers, set/reset circuitry for the MR sensors, accelerometers, pressure sensors, position sensing circuitry, compassing circuitry, etc.

RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. ProvisionalApplication Nos. (1) 60/475191, Honeywell Docket No. H0004602, filedJun. 2, 2003, entitled “Semiconductor Device Integration with aMagneto-Resistive Sensor,” naming as inventors Lonny L. Berg and WilliamF. Witcraft; (2) 60/475,175, Honeywell Docket No. H0004956, filed Jun.2, 2003, entitled “On-Die Set/Reset Driver for a Magneto-ResistiveSensor,” naming as inventors Mark D. Amundson and William F. Witcraft;(2) 60/475191; and (3) 60/462872, Honeywell Docket No. H0004948, filedApr. 15, 2003, entitled “Integrated GPS Receiver and Magneto-ResistiveSensor Device,” naming as inventors William F. Witcraft, Hong Wan,Cheisan J. Yue, and Tamara K. Bratland. The present application alsoincorporates each of these Provisional Applications in their entirety byreference herein

[0002] This application is also related to and incorporates by referenceU.S. Nonprovisional Application Nos. (1)______, Honeywell Docket No.H0004956US, filed concurrently, entitled “Integrated Set/Reset Driverand Magneto-Resistive Sensor,” naming as inventors Lonny L. Berg andWilliam F. Witcraft; and (2)______, Honeywell Docket No. H0004948US,filed concurrently, entitled “Integrated GPS Receiver andMagneto-Resistive Sensor Device,” naming as inventors William F.Witcraft, Hong Wan, Cheisan J. Yue, and Tamara K. Bratland.

BACKGROUND

[0003] 1. Field

[0004] The present invention relates in general to magnetic field andcurrent sensors, and more particularly, to integrating one or moresemiconductor devices with a magnetic field sensor.

[0005] 2. Related Art

[0006] Magnetic field sensors have applications in magnetic compassing,ferrous metal detection, and current sensing. They may detect magneticfield variations in machine components, the earth's magnetic fields,underground minerals, or electrical devices and lines.

[0007] In these situations, one may use a magneto-resistive sensor thatis able to detect small shifts in magnetic fields. Suchmagneto-resistive sensors may be formed using typical integrated circuitfabrication techniques. Typically, magneto-resistive sensors usePermalloy, a ferromagnetic alloy containing nickel and iron, as themagneto-resistive material. Often, the Permalloy is arranged in thinstrips of Permalloy film.

[0008] When a current is run through an individual strip, themagnetization direction of the strip may form an angle with thedirection of current flow. As the magnetization direction changes, theeffective resistance of the strip changes. Particularly, a magnetizationdirection parallel to the current flow direction results in maximumresistance through the strip and a magnetization direction perpendicularto the current flow direction results in minimum resistance through thestrip. This changed resistance may cause a change in voltage drop acrossthe strip when a current is run through the strip. This change involtage may be measured as an indication of change in the magnetizationdirection of external magnetic fields acting on the strip.

[0009] To form the magnetic field sensing structure of amagneto-resistive sensor, several Permalloy strips may be electricallyconnected together. The Permalloy strips may be placed on the substrateof the magneto-resistive sensor as a continuous resistor in a“herringbone” pattern or as a linear strip of magneto-resistivematerial, with conductors across the strip at an angle of 45 degrees tothe long axis of the strip.

[0010] This latter configuration is known as “barber-pole biasing.” Itmay force the current in a strip to flow at a 45-degree angle to thelong axis of the strip, because of the configuration of the conductors.These sensing structure designs are discussed in U.S. Pat. No.4,847,584, Jul. 11, 1989, to Bharat B. Pant and assigned to the sameassignee as the current application. U.S. Pat. No. 4,847,584 is herebyfully incorporated by reference. Additional patents and patentapplications describing magnetic sensor technologies are set forthbelow, in conjunction with the discussion of FIG. 2.

[0011] Magnetic sensors often include a number of straps through whichcurrent may be run, for controlling and adjusting the sensingcharacteristics. For example, magnetic sensor designs often include set,reset, and offset straps. Driver circuitry for these straps hastypically been located off-chip, resulting in space inefficiencies.

[0012] Similarly, other components, such as operational amplifiers,transistors, capacitors, etc., have typically been implemented on aseparate chip from the magnetic sensor. For example, signal conditioningand electrostatic discharge circuitry is typically located off-chip.While this may be fine for some applications, for others, in whichphysical space is at a premium, it would be desirable to have one ormore of these semiconductor components as part of the same chip as themagnetic sensor. Thus a single-chip design would be desirable.

BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Preferred embodiments of the present inventions are describedwith reference to the following drawings, wherein like referencenumerals refer to like elements in the various figures, and wherein:

[0014]FIGS. 1A-1D are simplified block diagrams illustrating exemplaryembodiments;

[0015]FIG. 2 is a diagram illustrating magneto-resistive sensor havingintegrated semiconductor underlayers in accordance with an exemplaryembodiment;

[0016]FIG. 3 is a diagram illustrating a magneto-resistive sensor with aMIM capacitor in accordance with an exemplary embodiment;

[0017]FIG. 4 is a plan view of a magneto-resistive sensor withsemiconductor components in accordance with an exemplary embodiment;

[0018]FIG. 5 is a first circuit diagram illustrating an integratedposition sensor in accordance with an exemplary embodiment;

[0019]FIG. 6 is a second circuit diagram illustrating a first compassingcircuit integrated with a magneto-resistive sensor in accordance with anexemplary embodiment; and

[0020]FIG. 7 is a third circuit diagram illustrating a second compassingcircuit integrated with a magneto-resistive sensor in accordance with anexemplary embodiment.

DETAILED DESCRIPTION

[0021] In view of the wide variety of embodiments to which theprinciples of the present invention can be applied, it should beunderstood that the illustrated embodiments are exemplary only, andshould not be taken as limiting the scope of the present invention.

[0022] Exemplary Architecture

[0023]FIGS. 1A-1B are simplified block diagrams illustrating integrationof a semiconductor device with one or more magneto-resistive sensingelements. The device 100 includes a first portion 102, including themagneto-resistive sensing elements (hereinafter collectively referred toas an “MR sensor”) and wiring (such as thin-film traces), and a secondportion 104, including one or more semiconductor device components. In apreferred embodiment, the second portion 104 also includes signalconditioning circuitry and circuitry for ESD (Electro-Static Discharge)protection for the MR sensor in the first portion 102. As discussedbelow, the second portion 104 is particularly amenable to standardsemiconductor fabrication techniques, such as those used for CMOS(Complementary Metal Oxide Semiconductor).

[0024] The first and second portions 102, 104 are included within thesame chip, so that the device 100 is a discrete, one-chip design. Priorattempts to integrate semiconductor devices with MR sensors havetypically involved at least two die, placed separately on a printedcircuit board, which likely results in a larger-sized end-user device(e.g. cell phone, portable device, watch, automotive sensor, etc.) andincreased complexity. The one-chip design of device 100 provides reducedsize and added functionality.

[0025] The first and second portions 102, 104 may be manufactured usingstandard RF/microwave processes, such as CMOS, Bipolar, BiCMOS, GaAs(Gallium Arsenide), and InP (Indium Phosphide), for example. While atechnology like GaAs may provide advantages in operational speed,reduced power consumption might best be realized through the use ofother techniques, such as those involving SOI (Silicon on Insulator) orMOI (Microwave-On-Insulator), a variation of SOI. In one embodiment, aSOI 0.35 μ processing is used.

[0026] In a preferred embodiment, the first portion 102 is manufacturedusing standard lithography, metallization, and etch processes, such asthose set forth in the list of patents incorporated by reference below.Other techniques for manufacturing the MR sensor may also be used,however. The second portion 104 is preferably manufactured using the SOI0.35 μ processing, or another RF/microwave method, such as GaAsprocessing.

[0027] Integrating the MR sensor with the one or more semiconductordevice components may be accomplished in one of at least two ways. In afirst embodiment, the MR sensor can be fabricated on the same die as thesemiconductor device components, and may include other circuitry, suchas signal conditioning and ESD protection circuitry. In a secondembodiment, the MR sensor is fabricated on a first die, while at leastsome of the semiconductor device components are fabricated on a seconddie. The first and second die may then be placed in close proximity toone another and may be packaged within a single integrated circuit chip.In either case, it may be advantageous to include one or moreconnections between the semiconductor device components and the MRsensor depending on the particular application. For example, suchconnections could provide feedback. Alternatively, the semiconductordevice components and MR sensor may be simply physically close to oneanother, but with no intentional electrical interaction.

[0028] Because conventional semiconductor processing techniques may beused, the particular semiconductor device circuitry is not disclosedherein, as it is flexible. Thus, conventional semiconductor designsimplementable in CMOS/Bipolar/BiCMOS, can be utilized in accordance withthe presently disclosed embodiments. Exemplary semiconductor devicesthat might be implemented include, without limitation, capacitors,inductors, operational amplifiers, sevreset circuitry for the MRsensors, accelerometers, pressure sensors, position sensing circuitry,compassing circuitry, etc.

[0029] Some semiconductor device components may generate electromagneticfields significant enough to influence operation of the MR sensor. Thus,the sensitive parts of the MR sensor portion 102 of the integrateddevice 100 may need to be physically separated from parts of thesemiconductor device portion 104 in order to provide optimal sensoroperation. The amount of separation may be determined using theoreticalor empirical means, for example.

[0030] As an alternative to introducing a physical separation betweenpotentially interfering parts of the integrated device 100, a shieldinglayer may be provided. FIGS. 1B-1D illustrate three exemplaryconfigurations for such a shield. In FIG. 1B, a shielding layer 106 islocated substantially between the first portion 102 and the secondportion 104. The shielding layer 106 may extend over some or the entireinterface between the first and second portions 102, 104, depending oncharacteristics of the electromagnetic fields and the location ofsensitive components. FIG. 1C shows a shielding layer 108 located withinthe second portion 104. FIG. 1D shows a localized shield 110, whichmight be beneficial where the majority of the magnetic field effectsoriginate from a relatively small part of the second portion 104. Theshield 110, may also be advantageous in designs having electricalconnections between the first and second portions 102, 104. Use of ashielding layer or shield will likely allow tighter integration of thedevice 100 than with physical separation of sensitive parts. While sucha shielding layer or shield may comprise metal or magnetic (e.g. NiFefilm), other materials may also be suitable.

[0031] Exemplary Fabrication Techniques

[0032]FIG. 2 illustrates an exemplary cross section of a device 200, inwhich one or more semiconductor components may be implemented with a MRsensor. For purposes of this example, CMOS/Bipolar semiconductortechnologies will be assumed. The semiconductor device components(perhaps along with any signal conditioning circuitry and drivers forset and/or offset straps associated with the MR sensor portion) may befabricated largely within CMOS/Bipolar underlayers 210, while the MRsensor may be fabricated in the layers 202-206 above the contact glasslayer 208. Also shown in FIG. 2 are various contacts V1-V3 andmetallizations M1-M3, and NiFe Permalloy structures (see the 1^(st)dielectric layer 206).

[0033] Besides the underlayers 210, the contact glass layer 208, and the1^(st) dielectric layer, 206, also shown are a second dielectric layer204, and a passivation layer 202. In one embodiment, layers 202-206 areformed using standard lithography, metallization, and etch processes,while layers 208-210 are formed using the SOI 0.35 μ processing, oranother RF/microwave method, such as GaAs processing. Other componentsof the MR sensor (such as set, reset, and offset straps; signalconditioning circuitry, and ESD protection circuitry) may be included invarious locations in the layers 206-210, and are not fully illustratedin FIG. 2.

[0034] Exemplary Magneto-Resistive Designs

[0035] For further information on MR sensor designs, reference may bemade to the following Honeywell patents and/or patent applications, allof which are incorporated by reference herein:

[0036] U.S. Pat. No. 6,529,114, Bohlinger et al., “Magnetic FieldSensing Device”

[0037] U.S. Pat. No. 6,232,776, Pant et al., “Magnetic Field Sensor forIsotropically Sensing an Incident Magnetic Field in a Sensor Plane”

[0038] U.S. Pat. No. 5,952,825, Wan, “Magnetic Field Sensing DeviceHaving Integral Coils for Producing Magnetic Fields”

[0039] U.S. Pat. No. 5,820,924, Witcraft et al., “Method of Fabricatinga Magnetoresistive Sensor”

[0040] U.S. Pat. No. 5,247,278, Pant et al., “Magnetic Field SensingDevice”

[0041] U.S. patent application Ser. No. 09/947,733, Witcraft et al.,“Method and System for Improving the Efficiency of the Set and OffsetStraps on a Magnetic Sensor”

[0042] U.S. patent application Ser. No. 10/002,454, Wan et al.,“360-Degree Rotary Position Sensor”

[0043] In addition, U.S. Pat. No. 5,521,501, to Dettmann et al., titled“Magnetic field sensor constructed from a remagnetization line and onemagnetoresistive resistor or a plurality of magnetoresistive resistors”is also incorporated herein by reference, and may provide additionaldetails on constructing a MR sensor.

[0044] Exemplary Metal-Insulator-Metal Capacitor Integration

[0045]FIG. 3 illustrates a particular application of integrating asemiconductor device with a MR sensor. The device 200 of FIG. 3 includesmany or all of the components illustrated in FIG. 2, with the additionof a Metal-Insulator-Metal (MIM) capacitor 350 shown in the firstdielectric layer 206. In addition, the contact V1 adjacent to the MIMcapacitor 350 is adjusted accordingly to provide the desired contactpoints. As shown, the MIM capacitor 350 is located between the contactV1 and a nitride layer overlaying low-resistivity metallization M1.While the MIM capacitor 350 is shown located in the first dielectriclayer 206, it could alternatively be in other locations, such as in thepassivation layer 202, second dielectric layer 204, or in theCMOS/Bipolar underlayers 210. The integrated MIM capacitor is animprovement over the linear capacitors utilized with prior MR sensorsdue to its reduced size, possibly resulting in a smaller overallpackage.

[0046] The device 200 is a preferred architecture for a MR sensor, andother architectures, having different Permalloy placements andstructures could be used instead. In yet another embodiment, the MIMcapacitor 350 could be included in the device 200, and the CMOS/Bipolarunderlayers 210 could be omitted or replaced with some other base orsubstrate material.

[0047] Exemplary Semiconductor Circuitry Integration

[0048]FIG. 4 is a plan view of one embodiment of a device 300 in whichone or more semiconductor devices are integrated with a MR sensor. Thestructures visible in FIG. 3 are attributable largely to the MR sensor(and other circuitry, such as sevoffset drivers or magnetic sensorsignal conditioning circuitry) formed in the underlayers of the device300. Exemplary parts of the device 300 include a magneto-resistivebridge 301, set/reset straps 302, offset straps 304, sevreset circuitry306-308, laser trim sites 310 (for matching impedance of the legs of thebridge 301), ESD protection diode 312, MIM capacitors 314, operationalamplifiers 316, contacts 318, and test sites 320. Reference may be madeto the patents and patent applications incorporated above for furtherinformation.

[0049]FIGS. 5-7 are simplified circuit diagrams illustrating examples ofthe types of semiconductor circuitry that may be integrated with a MRsensor. These exemplary diagrams are not intended to be an exhausting orinflexible list of circuitry that may be integrated with or integral tothe MR sensor, but rather to illustrate the breadth of circuitry thatmay be so integrated.

[0050]FIG. 5 is a simplified circuit diagram 500 illustrating anintegrated position sensor. The integrated position senor may be asaturated-mode-type sensor in which position or direction, but not theintensity, of a magnetic field of a device may be detected. Theintegrated position sensor may employ a position-sensing circuit 502integrated with a MR sensor 504 along with an externally-placed,bias-magnetic-field generator 506. The bias-magnetic-field generator506, however, may be placed in close proximity to the integratedposition-sensing circuit 502 and MR sensor 504.

[0051] The bias-magnetic-field generator 506 may be, for example, apermanent magnetic, an electro-magnetic, an anisotropic or giantmagneto-resistive sensor, or other device capable of creating andmaintaining magnetic field. In a preferred embodiment, thebias-magnetic-field generator 506 may be a permanent magnetic applying alinear or angular magnetic field greater than about 80 gauss. Themagnetic-field generated, however, may be greater than or less than thisexemplary value.

[0052] The position-sensing circuit 502 may include a differenceamplifier 508. The difference amplifier 508 may be deployed withadjustable offset and gain. The adjustable offset and gain may bedeployed in the same package as the other circuitry, and in the form oflaser trimable components, for instance. Alternatively, the adjustableoffset and gain or brought outside the package for use with externalcontrols, such as a simple parallel resistor circuit or moresophisticated regulation and/or trim circuitry. The adjustable offsetand gain may be beneficially employed to compensate and/or negateundesirable changes in the MR sensor 504.

[0053] The position-sensing circuit 502 may also include temperaturecompensation circuitry (not shown) to oppose adverse temperature effectsof the MR sensor. The temperature-compensation may be, for example, inthe form of a thermistor, a Permalloy element, and/or active-regulationcircuitry. The active regulation circuitry may sense a change, i.e., areduction or increase in voltage or current, due to temperature effectsand then provide compensation in the form of current and/or voltage inresponse. The position sensing circuit 502 may include other elements aswell.

[0054]FIG. 6 is a simplified circuit diagram 600 illustrating acompassing circuit 602 integrated with the MR sensor. In thisembodiment, the MR sensor may be formed from first and secondmagneto-resistive-sensing elements 604, 605 that can sense orthogonalmagnetic fields. In a three-dimensional coordinate system, for example,the first magneto-resistive-sensing element 604 may sense magneticfields in the “X” direction, whereas the secondmagneto-resistive-sensing element 605 may sense magnetic fields in the“Y” direction. The X-Y planes, of course, may rotate through thecoordinate system.

[0055] The compassing circuit 602 may include first and seconddifference amplifiers 608, 610 for the first and secondmagneto-resistive-sensing elements 604, 605, respectively. Like theposition-sensing circuit 502, each of the difference amplifiers 608, 610may be deployed with adjustable offset and gain to beneficiallycompensate and/or negate undesirable changes in the magneto-resistiveelements 604, 605. The compassing circuit 602 may include temperaturecompensation circuitry, such as described above, to oppose adversetemperature effects of the MR sensor.

[0056]FIG. 7 is a simplified circuit diagram 700 illustrating a secondcompassing circuit 702 integrated with the MR sensor. In thisembodiment, the MR sensor may be formed from first, second and thirdmagneto-resistive-sensing elements 704-706 that can sense threeorthogonal magnetic fields. The first and second magneto-resistivesensing elements 704, 705 may be fabricated on a first die, while thethird magneto-resistive sensing element 706 may be on a second die. Thesecond die may or may not be packaged with the first and secondmagneto-resistive sensing elements 704, 705.

[0057] In a three-dimensional coordinate system, the firstmagneto-resistive-sensing element 704 may sense magnetic fields in the“X” direction, whereas the second magneto-resistive-sensing element 705may sense magnetic fields in the “Y” direction. The thirdmagneto-resistive-sensing element 706 may sense magnetic fields in the“Z” direction. The compassing circuit 702 may include first, second andthree difference amplifiers 608-612 for the first, second and thirdmagneto-resistive-sensing elements 704-706, respectively. All three ofthe difference amplifiers 708-710 may be fabricated on the first die.

[0058] Like the position-sensing circuit 502, each of the differenceamplifiers 708-712 may be deployed with adjustable offset and gain tobeneficially compensate and/or negate undesirable changes in themagneto-resistive elements 704-706. The compassing circuit 702 mayinclude temperature compensation circuitry, such as described above, tooppose adverse temperature effects of the MR sensor.

[0059] Exemplary Process for Integrating Semiconductor Components withMR Sensor.

[0060] Table 1, below, shows a simplified exemplary process forintegrating one or more semiconductor device components with a MRsensor. It is believed that such a process is unique because, in thepast, semiconductor foundries have gone to great lengths to preventcontamination of their processes with materials typically used inmanufacturing magnetic sensors. In addition, companies in the magneticindustries (e.g. disk drive head manufacturers, etc.) have been separatefrom electronics companies, and their specialized manufacturingtechniques have been kept largely separate from one another. TABLE 1Sample Manufacturing Process Clean Wafer Oxide and Nitride diffusion,lithography, etch, clean (device-specific structuring) Boron/Phosphorousimplants (if any), clean (end front-end processing; begin back-endprocessing) Deposit contact glass (if any), reflow Device-specificstructuring Metallizations, deposit and structure dielectrics(device-specific structuring) Inspection and evaluation

[0061] In a preferred embodiment, the semiconductor device processing isdone at the front end, while the lithography and etch steps associatedwith making the MR sensor are done at the back end. Table 1 is intendedto be generally applicable to many MR sensor manufacturing processes,and thus does not include detail on how to obtain particulararchitectures. The architectures shown in FIGS. 2 and 3 would involveseveral iterations of the backend steps to obtain the multiple layers ofdielectrics and metallizations. Of course, additional cleaning and othersteps should be implemented as appropriate.

CONCLUSION

[0062] Exemplary embodiments of a device using having one or moresemiconductor components integrated with a MR sensor device andexemplary processing options have been described. Because such anintegrated device may be manufactured as a single chip, the user mayrealize advantages that include cost reduction, reduced size andincreased functionality, among others.

[0063] In the foregoing detailed description, numerous specific detailsare set forth in order to provide a thorough understanding of exemplaryembodiments described herein. However, it will be understood that theseembodiments may be practiced without the specific details. In otherinstances, well-known methods, procedures, components and circuits havenot been described in detail, so as not to obscure the followingdescription.

[0064] Further, the embodiments disclosed are for exemplary purposesonly and other embodiments may be employed in lieu of or in combinationwith of the embodiments disclosed. Moreover, it is contemplated that theabove-described apparatus and components may be fabricated usingSilicon/Gallium Arsenide (Si/GaAs), Silicon/Germanium (SiGe), and/orSilicon/Carbide (SiC) fabricating techniques in addition to theabove-described techniques. Included amongst these techniques areHeterojunction Bipolar Transistor (HBT) fabrication processes, and/orMetal Semiconductor Field Effect Transistor (MESFET) fabricationprocesses.

[0065] The exemplary embodiments described herein may be deployed invarious equipment and other devices, which may include or be utilizedwith any appropriate voltage source, such as a battery, an alternatorand the like, providing any appropriate voltage, such as about 0.4, 5,10, 12, 24 and 48 Volts DC, and about 24, and 120 Volts AC and the like.

[0066] Further, the claims should not be read as limited to thedescribed order or elements unless stated to that effect. In addition,use of the term “means” in any claim is intended to invoke 35 U.S.C.§112, 6, and any claim without the word “means” is not so intended.

We claim:
 1. A single-package sensing apparatus comprising semiconductorcircuitry and a magneto-resistive sensor.
 2. The sensing apparatus ofclaim 1, wherein the semiconductor circuitry and magneto-resistivesensor are monolithically formed on a single chip.
 3. The sensingapparatus of claim 1, wherein the at least a portion of thesemiconductor circuitry is monolithically formed on a first chip withthe magneto-resistive sensor.
 4. The sensing apparatus of claim 3,wherein at least a portion of the semiconductor circuitry is formed on asecond chip.
 5. The sensing apparatus of claim 4, wherein the first andsecond chips are electrically connected together.
 6. The sensingapparatus of claim 4, wherein the second chip is placed in closeproximity to the first chip.
 7. The sensing apparatus of claim 6,wherein the first and second chips are electrically connected together.8. The sensing apparatus of claim 2, further comprising at least oneconnection pathway for connecting the semiconductor circuitry with themagneto-resistive sensor.
 9. The sensing apparatus of claim 8, furthercomprising conducting portions disposed in the at least one connectionpathway.
 10. The sensing apparatus of claim 9, wherein the conductingportion comprises thin-film interconnects.
 11. The sensing apparatus ofclaim 2, further comprising a dielectric disposed between thesemiconductor circuitry and the magneto-resistive sensor.
 12. Thesensing apparatus of claim 11, wherein the dielectric is disposed oncontact glass.
 13. The sensing apparatus of claim 12, wherein thecontact glass comprises a material selected from the group consisting ofsilicon-nitride (Si3N4), borophosilicate glass (BPSG), silicon-oxide(SiO2), and any other etchable dielectric that can be a substantiallyplanar surface.
 14. The sensing apparatus of claim 11, furthercomprising at least one connection pathway in the contact glass forconnecting the semiconductor circuitry with the magneto-resistivesensor.
 15. The sensing apparatus of claim 14, further comprisingconducting portions disposed in the at least one connection pathway. 16.The sensing apparatus of claim 1, wherein the semiconductor circuitrycomprises any electronic device formed fromComplementary-Metal-Oxide-Semiconductor(CMOS), bipolar,Gallium-Arsenide, Germanium, bipolarCMOS (BiCMOS), Indium Phosphide(InP), and Silicon-On-Insulator (SOI) technologies.
 17. The sensingapparatus of claim 2, wherein the semiconductor circuitry comprises anyof a resistor, capacitor, inductor, switch, pressure sensor,accelerometer, amplifier, diode, and any other functional component. 18.The sensing apparatus of claim 17, wherein the semiconductor circuitrycomprises any of functional adjust, signal conditioning, andelectro-static-discharge protection circuitry.
 19. The sensing apparatusof claim 2, wherein the magneto-resistive sensor comprises a sensorselected from the group consisting of a anisotropic-magneto sensor, agiant-magneto sensor, and a colossal-magneto sensor.
 20. The sensingapparatus of claim 1, further comprising a metal-insulator-metalcapacitor formed adjacent to the magneto-resistive sensor on the samechip.
 21. The sensing apparatus of claim 2, wherein the semiconductorcircuitry is physically separate from the magneto-resistive sensor toprevent undesired interaction between the semiconductor circuitry andmagneto-resistive sensor.
 22. The sensing apparatus of claim 2, furthercomprising a shield disposed between the semiconductor circuitry and themagneto-resistive sensor.
 23. The sensing apparatus of claim 22, whereinthe shield comprises a material selected from the group consisting ofmetal, metallic, magnetic, and other isolating material.
 24. The sensingapparatus of claim 22, wherein the shield allows for tighter integrationof the semiconductor circuitry and magneto-resistive sensor.
 25. Thesensing apparatus of claim 22, wherein the shield prevents thesemiconductor circuitry from undesirably affecting an operation of themagneto-resistive sensor.
 26. The sensing apparatus of claim 22, whereinthe shield prevents the magneto-resistive sensor from undesirablyaffecting an operation of the semiconductor circuitry.
 27. The sensingapparatus of claim 22, wherein the shield is disposed in close proximityto semiconductor circuitry.
 28. The sensing apparatus of claim 22,wherein the shield is disposed in close proximity to magneto-resistivesensor.
 29. The sensing apparatus of claim 22, wherein the semiconductorcircuitry is formed in a first part and the magneto-resistive sensor isformed in a second part, and wherein the shield is disposed in the firstpart.
 30. The sensing apparatus of claim 22, wherein the semiconductorcircuitry is formed in a first part and the magneto-resistive sensor isformed in a second part, and wherein the shield is disposed in thesecond part.
 31. The sensing apparatus of claim 11, further comprising ashield disposed in the dielectric.
 32. The sensing apparatus of claim31, wherein the shield prevents the semiconductor circuitry fromundesirably affecting an operation of the magneto-resistive sensor. 33.The sensing apparatus of claim 31, wherein the shield prevents themagneto-resistive sensor from undesirably affecting an operation of thesemiconductor circuitry.
 34. The sensing apparatus of claim 31, whereinthe shield is disposed closer to the semiconductor circuitry than themagneto-resistive sensor.
 35. The sensing apparatus of claim 31, whereinthe shield is disposed closer to the magneto-resistive sensor than thesemiconductor circuitry.
 36. A monolithically formed sensing apparatuscomprising: a first part having semiconductor circuitry disposedthereon; a second part having a magneto-resistive sensor disposedthereon; a dielectric layer disposed between said first and secondparts; wherein the first part is fabricated before the second part. 37.The sensing apparatus of claim 36, wherein the dielectric layer isformed over the first part before the second part is formed.
 38. Thesensing apparatus of claim 36, wherein the first part is formed usingstandard fabricating processes for forming any ofComplementary-Metal-Oxide-Semiconductor(CMOS), bipolar,Gallium-Arsenide, Germanium, bipolarCMOS (BiCMOS), and Indium Phosphide(InP), and Silicon-On-Insulator (SOI) semiconductor circuitry.
 39. Thesensing apparatus of claim 36, wherein the second part is formed usingstandard fabricating processes for forming magneto-resistive sensors.40. The sensing apparatus of claim 36, wherein the second partcomprises: magneto-resistive structures; at least one firstmetallization; at least one first contact coupled to the at least onefirst metallization; a second dielectric layer disposed over at leastthe dielectric layer; at least one second metallization coupled to theat least one first contact; at least one second contact coupled to theat least one second metallization; a third dielectric layer disposedover at least the second dielectric layer; at least one thirdmetallization coupled to the at least one second contact; at least onethird contact coupled to the at least one third metallization; and afourth dielectric layer disposed over at least the third dielectriclayer.
 41. The sensing apparatus of claim 40, wherein the second partfurther comprises a metal-insulator-metal capacitor disposed between theat least one first metallization and the at least one first contact. 42.The sensing apparatus of claim 36, wherein the contact glass comprises amaterial selected from the group consisting of silicon-nitride (Si3N4),borophosilicate glass (BPSG), and silicon-oxide (SiO2).
 43. The sensingapparatus of claim 36, wherein the first part having semiconductorcircuitry disposed thereon comprises operational amplifiers,electrostatic-discharge elements, test sites and trim sites, and whereinthe second part having a magneto-resistive sensor disposed thereoncomprises a magneto-resistive bridge, calibration electronics, testsites and trim sites.
 44. The sensing apparatus of claim 2, wherein inthe magneto-resistive sensor provides an output signal proportional to asensed magnetic field, and wherein the position-sensing circuitrycomprises at least one amplifier coupled the output signal.
 45. Thesensing apparatus of claim 44, wherein the at least one amplifier has anadjustable offset.
 46. The sensing apparatus of claim 45, wherein theadjustable offset is controlled by external circuitry.
 47. The sensingapparatus of claim 44, wherein the at least one amplifier has anadjustable gain.
 48. The sensing apparatus of claim 47, wherein theadjustable gain is controlled by external circuitry.
 49. The sensingapparatus of claim 44, wherein the semiconductor circuitry furthercomprises temperature-compensation circuitry.
 50. The sensing apparatusof claim 2, wherein the first and second magneto-resistive sensorsdetect magnetic fields in orthogonal planes and provide respective firstand second output signals proportional to the detected magnetic field,and wherein the semiconductor circuitry comprises compassing circuitrycoupled to the first and second output signals to provide a compassingoutput responsive to the first and second output signals.
 51. Thesensing element of claim 50, wherein the compassing circuitry comprisesat least two amplifiers, wherein a one of the at least two amplifiers iscoupled the first output signal and another of the least two amplifiersis coupled to the second output signal.
 52. The sensing apparatus ofclaim 51, wherein each of the at least two amplifiers has an adjustablevoltage offset.
 53. The sensing apparatus of claim 50, wherein thecompassing circuitry further comprises first and second offset-drivercircuitry for adjusting respective offsets of the first and secondmagneto-resistive sensors.
 54. The sensing apparatus of claim 50,further comprising a third magneto-resistive sensor, wherein the thirdmagneto-resistive sensor and the third reorientation element are formedon a second chip.
 55. The sensing apparatus of claim 54, wherein thefirst, second and third magneto-resistive sensors detect magnetic fieldsin an orthogonal planes to each other and provide respective first,second and third output signals proportional to the detected magneticfields, and wherein the semiconductor circuitry comprises compassingcircuitry coupled to the first, second and third output signals toprovide a compassing output responsive to the first, second and thirdoutput signals.
 56. The sensing apparatus of claim 55, wherein thesemiconductor circuitry further comprises temperature-compensationcircuitry.
 57. The sensing element of claim 55, wherein the compassingcircuitry comprises at least three amplifiers, wherein a one of the atleast three amplifiers is coupled the first output signal, a second ofthe least three amplifiers is coupled to the second output signal, and athird of the least three amplifiers is coupled to the third outputsignal.
 58. The sensing apparatus of claim 57, wherein each of the atleast three amplifiers has an adjustable offset and gain.
 59. A methodof making a sensing apparatus, the method comprising: formingsemiconductor circuitry; and forming a magneto-resistive sensor adjacentto the semiconductor circuitry, wherein the semiconductor circuitry andmagneto-resistive sensor are formed into a single package.
 60. Themethod of claim 59, wherein the steps of forming semiconductor circuitryand forming a magneto-resistive sensor adjacent to the semiconductorcircuitry comprise monolithically forming the semiconductor circuitryand magneto-resistive sensor on a single chip.
 61. The method of claim59, wherein the steps of forming semiconductor circuitry and forming amagneto-resistive sensor adjacent to the semiconductor circuitrycomprise monolithically forming on a first chip at least a portion ofthe semiconductor circuitry and the magneto-resistive sensor.
 62. Themethod of claim 61, wherein the steps of forming semiconductor circuitryand forming a magneto-resistive sensor adjacent to the semiconductorcircuitry comprise forming on a second chip at least a portion of thesemiconductor circuitry.
 63. The method of claim 62, further comprisingelectrically connecting the first and second chips together.
 64. Themethod of claim 62, wherein the steps of forming semiconductor circuitryand forming a magneto-resistive sensor adjacent to the semiconductorcircuitry comprise placing the second chip in close proximity to thefirst chip.
 65. The method of claim 59, further comprising forming atleast one connection pathway for connecting the semiconductor circuitrywith the magneto-resistive sensor.
 66. The method of claim 65, furthercomprising forming conducting portions in the at least one connectionpathway.
 67. The method of claim 60, further comprising forming adielectric between the semiconductor circuitry and the magneto-resistivesensor.
 68. The method of claim 67, further comprising forming in thedielectric at least one connection pathway for connecting thesemiconductor circuitry with the magneto-resistive sensor.
 69. Themethod of claim 68, further comprising forming conducting portions inthe at least one connection pathway.
 70. The method of claim 60, whereinthe step of forming the semiconductor circuitry comprises forming anyelectronic device using standard processes forComplementary-Metal-Oxide-Semiconductor(CMOS), bipolar,Gallium-Arsenide, Germanium, bipolarCMOS (BiCMOS), Indium Phosphide(InP), and Silicon-On-Insulator (SOI), technologies.
 71. The method ofclaim 60, wherein the step of forming a magneto-resistive sensorcomprises using standard magneto-resistive processes to form a sensorselected from the group consisting of an anisotropic-magneto sensor, agiant-magneto sensor, and a colossal-magneto sensor.
 72. The method ofclaim 60, further comprising forming a metal-insulator-metal capacitorwithin the magneto-resistive sensor.
 73. The method of claim 60, whereinthe steps of forming semiconductor circuitry and forming amagneto-resistive sensor adjacent to the semiconductor circuitrycomprises forming the semiconductor circuitry physically separate fromthe magneto-resistive sensor to prevent undesired interaction betweenthe semiconductor circuitry and magneto-resistive sensor.
 74. The methodof claim 60, further comprising forming a shield between thesemiconductor circuitry and the magneto-resistive sensor.
 75. The methodof claim 67, further comprising forming a shield in the dielectric. 76.The method of claim 60, wherein the first part is fabricated before thesecond part.
 77. The method of claim 67, wherein the first part isfabricated before the second part.
 78. The method of claim 67, whereinthe dielectric layer is formed over the first part before the secondpart is formed.
 79. The method of claim 67, wherein forming the secondpart comprises: forming magnetoresistive structures over the dielectriclayer; forming at least one first metallization over the dielectriclayer; forming at least one first contact onto the at least one firstmetallization; forming a second dielectric layer over the dielectriclayer and the at least one first metallization; forming at least onesecond metallization over the at least one first contact and the seconddielectric layer; forming at least one second contact over the at leastone second metallization; forming a third dielectric layer over thesecond dielectric layer and the at least one second metallization;forming at least one third metallization over to the at least one secondcontact; forming at least one third contact over to the at least onethird metallization; and forming a fourth dielectric layer over thethird dielectric layer and the third metallization.
 80. The method ofclaim 79, further comprising forming a metal-insulator-metal capacitorbetween the at least one first metallization and the at least one firstcontact.